发明申请
- 专利标题： Semiconductor device having rectifying action
- 专利标题（中）： 具有整流作用的半导体装置
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申请号： US11498793申请日： 2006-08-04
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公开(公告)号： US20060267129A1公开(公告)日： 2006-11-30
- 发明人: Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
- 申请人： Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2002-351374 20021203
- 主分类号： H01L31/07
- IPC分类号： H01L31/07
摘要：
A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.
公开/授权文献
- US07781869B2 Semiconductor device having rectifying action 公开/授权日：2010-08-24
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