发明申请
US20060267201A1 Technique for forming copper-containing lines embedded in a low-k dielectric by providing a stiffening layer
审中-公开
通过提供加强层来形成嵌入在低k电介质中的含铜线的技术
- 专利标题： Technique for forming copper-containing lines embedded in a low-k dielectric by providing a stiffening layer
- 专利标题（中）： 通过提供加强层来形成嵌入在低k电介质中的含铜线的技术
-
申请号： US11295756申请日： 2005-12-07
-
公开(公告)号： US20060267201A1公开(公告)日： 2006-11-30
- 发明人: Peter Huebler , Frank Koschinsky , Frank Feustel
- 申请人： Peter Huebler , Frank Koschinsky , Frank Feustel
- 优先权： DE102005024912.4 20050531
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
By providing a stiffening layer at three sidewalls of a trench to be filled with a copper-containing metal, the reduced thermomechanical confinement of a low-k material may be compensated for, at least to a certain degree, thereby reducing electromigration effects and hence increasing lifetime of sophisticated semiconductor devices having metallization layers including low-k dielectric materials in combination with copper-based metal lines.
信息查询
IPC分类:
