发明申请
- 专利标题: Anti-fuse circuit and anti-fusing method
- 专利标题(中): 防熔丝电路和防熔方法
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申请号: US11443307申请日: 2006-05-31
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公开(公告)号: US20060268646A1公开(公告)日: 2006-11-30
- 发明人: Nam-Jong Kim , Young-Sun Min
- 申请人: Nam-Jong Kim , Young-Sun Min
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2005-45974 20050531
- 主分类号: G11C17/18
- IPC分类号: G11C17/18
摘要:
An anti-fuse and an anti-fusing method are disclosed. An example embodiment of the present invention is directed to an anti-fuse circuit, including an anti-fuse receiving a first voltage, a pull-up transistor coupled between the anti-fuse and a first node, the pull-up transistor configured to pull up a voltage at the first node to the first voltage when the anti-fuse is in a given operation mode, a pull-down transistor configured to pull down the voltage at the first node to a second voltage in response to a pull-down control signal, the second voltage lower than the first voltage, a voltage level detector configured to compare a detection reference voltage level with a voltage level at the first node to generate a detection output signal and a pull-down control circuit configured to generate the pull-down control signal based on a fuse input signal and the detection output signal.
公开/授权文献
- US07317651B2 Anti-fuse circuit and anti-fusing method 公开/授权日:2008-01-08
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