- 专利标题: Novel high-k dielectric materials and processes for manufacturing them
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申请号: US11499308申请日: 2006-08-03
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公开(公告)号: US20060270148A1公开(公告)日: 2006-11-30
- 发明人: Jiong-Ping Lu , Ming-Jang Hwang
- 申请人: Jiong-Ping Lu , Ming-Jang Hwang
- 主分类号: H01L21/473
- IPC分类号: H01L21/473 ; H01L21/8242
摘要:
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.