发明申请
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11437983申请日： 2006-05-22
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公开(公告)号： US20060270191A1公开(公告)日： 2006-11-30
- 发明人: Tomoko Tamura , Kaori Ogita , Koji Dairiki , Junya Maruyama
- 申请人： Tomoko Tamura , Kaori Ogita , Koji Dairiki , Junya Maruyama
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2005-158761 20050531
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.
公开/授权文献
- US07465674B2 Manufacturing method of semiconductor device 公开/授权日：2008-12-16
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