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1.发明授权公开(公告)号：US07588969B2
公开(公告)日：2009-09-15
申请号：US11417182
申请日：2006-05-04
申请人： Kaori Ogita , Tomoko Tamura , Junya Maruyama , Koji Dairiki
发明人： Kaori Ogita , Tomoko Tamura , Junya Maruyama , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L27/13 , H01L21/7813 , H01L27/1266 , H01L27/1292
摘要： The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.
摘要翻译： 本发明提供一种以低成本实现高可靠性的薄型半导体器件的制造方法以及通过该方法制造的半导体器件。 在衬底上依次形成剥离层，晶体管和绝缘层，形成开口以使至少一部分剥离层露出，并且晶体管通过物理手段从衬底剥离 。 通过使用溶液的方法，通过形成金属膜和金属氧化物膜以与金属膜接触来形成剥离层。
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公开(公告)号：US07465674B2
公开(公告)日：2008-12-16
申请号：US11437983
申请日：2006-05-22
申请人： Tomoko Tamura , Kaori Ogita , Koji Dairiki , Junya Maruyama
发明人： Tomoko Tamura , Kaori Ogita , Koji Dairiki , Junya Maruyama
IPC分类号： H01L21/311
CPC分类号： H01L27/1266 , H01L21/7806 , H01L27/1214
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.
摘要翻译： 本发明的目的是提供一种以低成本制造具有高可靠性的半导体器件的方法，其中设置在衬底上的薄膜晶体管等的元件形成层从衬底上剥离，使得 制造半导体器件。 根据本发明，在基板上形成金属膜，在一氧化二氮气氛中对金属膜进行等离子体处理，在金属膜上形成金属氧化物膜，连续形成第一绝缘膜而不暴露于 在第一绝缘膜上形成元件形成层的空气，并且元件形成层从基板剥离，从而制造半导体器件。
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公开(公告)号：US20060270191A1
公开(公告)日：2006-11-30
申请号：US11437983
申请日：2006-05-22
申请人： Tomoko Tamura , Kaori Ogita , Koji Dairiki , Junya Maruyama
发明人： Tomoko Tamura , Kaori Ogita , Koji Dairiki , Junya Maruyama
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/7806 , H01L27/1214
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.
摘要翻译： 本发明的目的是提供一种以低成本制造具有高可靠性的半导体器件的方法，其中设置在衬底上的薄膜晶体管等的元件形成层从衬底上剥离，使得 制造半导体器件。 根据本发明，在基板上形成金属膜，在一氧化二氮气氛中对金属膜进行等离子体处理，在金属膜上形成金属氧化物膜，连续形成第一绝缘膜而不暴露于 在第一绝缘膜上形成元件形成层的空气，并且元件形成层从基板剥离，从而制造半导体器件。
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公开(公告)号：US20060266410A1
公开(公告)日：2006-11-30
申请号：US11417182
申请日：2006-05-04
申请人： Kaori Ogita , Tomoko Tamura , Junya Maruyama , Koji Dairiki
发明人： Kaori Ogita , Tomoko Tamura , Junya Maruyama , Koji Dairiki
IPC分类号： H01L31/00
CPC分类号： H01L27/13 , H01L21/7813 , H01L27/1266 , H01L27/1292
摘要： The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.
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公开(公告)号：US08790994B2
公开(公告)日：2014-07-29
申请号：US13596376
申请日：2012-08-28
申请人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
发明人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
IPC分类号： H01L21/46
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译： 本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。 根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。
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公开(公告)号：US20050214984A1
公开(公告)日：2005-09-29
申请号：US11079262
申请日：2005-03-15
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板上剥离并快速剥离半导体元件。 由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离， 因此通过热处理使剥离层结晶而施加应力。 因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性 在基板上。
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公开(公告)号：US20080093464A1
公开(公告)日：2008-04-24
申请号：US11660165
申请日：2005-08-10
申请人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
发明人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
IPC分类号： G06K19/06 , H01L21/84 , H01L29/786
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译： 本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。 根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。
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公开(公告)号：US08288773B2
公开(公告)日：2012-10-16
申请号：US11660165
申请日：2005-08-10
申请人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
发明人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
IPC分类号： H01L29/76
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译： 本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。 根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。
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公开(公告)号：US07704765B2
公开(公告)日：2010-04-27
申请号：US11889110
申请日：2007-08-09
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。 由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离， 因此通过热处理使剥离层结晶而施加应力。 因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性 在基板上。
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公开(公告)号：US07282380B2
公开(公告)日：2007-10-16
申请号：US11079262
申请日：2005-03-15
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
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