发明申请
- 专利标题: PROGRAMMING AND DETERMINING STATE OF ELECTRICAL FUSE USING FIELD EFFECT TRANSISTOR HAVING MULTIPLE CONDUCTION STATES
- 专利标题(中): 使用具有多个导通状态的场效应晶体管编程和确定电子熔丝状态
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申请号: US11160056申请日: 2005-06-07
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公开(公告)号: US20060273841A1公开(公告)日: 2006-12-07
- 发明人: David Hanson , Dureseti Chidambarrao , Gregory Fredeman , David Onsongo
- 申请人: David Hanson , Dureseti Chidambarrao , Gregory Fredeman , David Onsongo
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01H37/76
- IPC分类号: H01H37/76
摘要:
A circuit is provided which is operable to program an electrically alterable element, e.g., fuse or antifuse, to a programmed state and determine whether the electrically alterable element is in the programmed state or not. Such circuit includes a multiple conduction state field effect transistor (“multi-state FET”) having at least one of a source or a drain coupled to the electrically alterable element to apply a current to the electrically alterable element. The multi-state FET has a first threshold voltage and a second threshold voltage, both being effective at the same time, the second threshold voltage being higher than the first threshold voltage. The gate is operable to control operation of the multi-state FET in multiple states including a) an essentially nonconductive state; b) a first or “low” conductive state when a gate-source voltage exceeds the first threshold voltage, in which the multi-state FET is biased to conduct a relatively low magnitude current for determining the state of the fuse; and c) a second conductive state when the gate-source voltage exceeds the second threshold voltage, in which the multi-state FET is biased to conduct a relatively high magnitude programming current.