发明申请
US20060278907A1 Semiconductor element, semiconductor sensor and semiconductor memory element
有权
半导体元件，半导体传感器和半导体存储元件
- 专利标题： Semiconductor element, semiconductor sensor and semiconductor memory element
- 专利标题（中）： 半导体元件，半导体传感器和半导体存储元件
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申请号： US10549364申请日： 2004-03-05
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公开(公告)号： US20060278907A1公开(公告)日： 2006-12-14
- 发明人: Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikako Yokawa , Keisuke Hirabayashi
- 申请人： Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikako Yokawa , Keisuke Hirabayashi
- 申请人地址： JP Saitama 332-0012
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人地址： JP Saitama 332-0012
- 优先权： JP2003071584 20030317
- 国际申请： PCT/JP04/02889 WO 20040305
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L29/76
摘要：
A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown γ-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the γ-Al2O3 single crystal film (2).
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