发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11411932申请日： 2006-04-27
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公开(公告)号： US20060281264A1公开(公告)日： 2006-12-14
- 发明人: Shigenori Hayashi , Kazuhiko Yamamoto
- 申请人： Shigenori Hayashi , Kazuhiko Yamamoto
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2005-170210 20050609
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/76
摘要：
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
公开/授权文献
- US07465618B2 Semiconductor device and method for fabricating the same 公开/授权日：2008-12-16
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