发明申请
- 专利标题： Method of manufacturing gallium nitride based high-electron mobility devices
- 专利标题（中）： 制造氮化镓基高电子迁移率器件的方法
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申请号： US11147342申请日： 2005-06-08
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公开(公告)号： US20060281284A1公开(公告)日： 2006-12-14
- 发明人: Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri
- 申请人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
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