Method of manufacturing gallium nitride based high-electron mobility devices
    2.
    发明申请
    Method of manufacturing gallium nitride based high-electron mobility devices 有权
    制造氮化镓基高电子迁移率器件的方法

    公开(公告)号:US20060281284A1

    公开(公告)日:2006-12-14

    申请号:US11147342

    申请日:2005-06-08

    CPC classification number: H01L29/7783 H01L29/2003

    Abstract: A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    Abstract translation: 异质结装置的制造方法包括:形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层,以在所述第二层和所述第三层之间提供电子气。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Calculating graphic scaler
    3.
    发明授权
    Calculating graphic scaler 失效
    计算图形缩放器

    公开(公告)号:US5551160A

    公开(公告)日:1996-09-03

    申请号:US296221

    申请日:1994-08-24

    CPC classification number: G06G1/06 Y10S33/09

    Abstract: A crop, measure and scale system and a measure and scale system are provided for use in preparing an original image for processing. The crop, measure, and scale system includes first and second corner members which define an infinitely adjustable image frame. Each corner member includes a pair of diverging arms, one arm being characterized as an abscissa arm and the other as an ordinate arm, each of which includes an internally facing edge. A calculating measure is mounted on one of the corner members, such calculating measure including a slide rule with a ruler which extends between opposite edges of the cropped image, and a slide which provides for calculation of a reduction/enlargement percentage based on a predetermined desired dimensional change. The measure and scale system includes the calculating measure described above joined to an elongate member.

    Abstract translation: 提供作物,测量和比例系统以及测量和缩放系统,用于准备原始图像进行处理。 作物,测量和比例系统包括限定无限可调图像帧的第一和第二角部件。 每个角构件包括一对发散臂,一个臂被表征为横坐标臂,另一个作为纵坐标臂,每个臂包括内侧边缘。 计算措施安装在角部件之一上,这种计算措施包括具有在裁切图像的相对边缘之间延伸的尺子的滑动规则,以及用于基于预定的期望值计算减小/放大百分比的滑块 尺寸变化。 测量和刻度系统包括与细长构件连接的上述计算措施。

    Global domination board game
    4.
    发明授权
    Global domination board game 失效
    全球控制板游戏

    公开(公告)号:US4687206A

    公开(公告)日:1987-08-18

    申请号:US686307

    申请日:1984-12-24

    CPC classification number: A63F3/00075

    Abstract: A global domination board game for a plurality of players having the object of total global domination by one of the players without excessive destruction of the planet. A game board has a map of a planetary surface divided into a plurality of continental powers, and further divided into a plurality of territories within each continental power. Each territory is identified as having a primary asset including population, resources or technology. A deck of cards is used which includes a territory card for each of the territories identified on the map of the game board and a plurality of wild cards. Players have a plurality of active playing pieces including pieces representing conventional forces, tactical weapon systems and strategic nuclear weapons. Players conduct simulated military attacks on territories occupied by opposing players. In an alternate embodiment, players also have naval capability, and it is possible for all players to lose the game if destruction of the planetary surface exceeds a predetermined level.

    Abstract translation: 一个全球统治板游戏的多个玩家具有全球统治的对象,其中一个玩家没有过度的地球破坏。 游戏板具有划分为多​​个大陆力量的行星表面的地图,并且进一步分成每个大陆力量内的多个区域。 每个领域被确定为拥有人口,资源或技术等主要资产。 使用一张牌,其中包括在游戏板的地图上识别的每个领土和多个通配符的领土卡。 玩家有多个活跃的棋子,其中包括代表常规武器,战术武器系统和战略核武器的棋子。 玩家对被敌对玩家占领的地区进行模拟军事攻击。 在替代实施例中,玩家还具有海军能力,并且如果行星表面的破坏超过预定水平,则所有玩家都可能失去游戏。

    Optical Sensor and Sensing System for Oxygen Monitoring in Fluids Using Molybdenum Cluster Phosphorescence
    5.
    发明申请
    Optical Sensor and Sensing System for Oxygen Monitoring in Fluids Using Molybdenum Cluster Phosphorescence 审中-公开
    使用钼簇荧光的液体中氧气监测的光学传感器和传感系统

    公开(公告)号:US20140017127A1

    公开(公告)日:2014-01-16

    申请号:US13883759

    申请日:2011-11-04

    Abstract: A composite comprises a polymer matrix and a luminophore dispersed therein. The composite is useful as a sensing film that is used as an optical sensor for oxygen measurement comprising the composite sensing film; a source of photons for photo-exciting the luminophores and a waveguide, transparent in the frequency range of the excitation photons, for guiding the excitation photons from the source to the composite sensing film; a detector for measuring properties of photons emitted from the luminophores. A system including a computer may be useful for coordinating the activities of the sensor.

    Abstract translation: 复合材料包括分散在其中的聚合物基质和发光体。 该复合材料可用作感测膜,该感测膜用作包括复合传感膜的氧测量的光学传感器; 用于光激发发光体的光子源和在激发光子的频率范围内透明的用于将激发光子从源引导到复合感测膜的波导; 用于测量从发光体发射的光子的性质的检测器。 包括计算机的系统可用于协调传感器的活动。

    Gallium nitride based high-electron mobility devices
    6.
    发明申请
    Gallium nitride based high-electron mobility devices 有权
    基于氮化镓的高电子迁移率器件

    公开(公告)号:US20060278892A1

    公开(公告)日:2006-12-14

    申请号:US11147341

    申请日:2005-06-08

    CPC classification number: H01L29/7783 H01L29/2003

    Abstract: A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    Abstract translation: 异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Detecting presence of a subject string in a target string and security event qualification based on prior behavior by an end user of a computer system
    7.
    发明授权
    Detecting presence of a subject string in a target string and security event qualification based on prior behavior by an end user of a computer system 有权
    基于计算机系统的最终用户的先前行为来检测目标字符串中的主题字符串的存在和安全事件限定

    公开(公告)号:US08321958B1

    公开(公告)日:2012-11-27

    申请号:US12511307

    申请日:2009-07-29

    CPC classification number: G06F21/51 G06F17/30867

    Abstract: A software-based security agent that hooks into the operating system of a computer device in order to continuously audit the behavior and conduct of the end user of the computer device. The detected actions of the end user can be stored in a queue or log file that can be continuously monitored to detect patterns of behavior that may constitute a policy violation and/or security risk. When a pattern of behavior that may constitute a policy violation and/or security risk is detected, an event may be triggered. A frequency vector string matching algorithm also is disclosed. The frequency vector string matching algorithm may be used to detect the presence or partial presence of subject strings within a target string of alphanumeric characters. The frequency vector string matching algorithm could be used to detect typos in stored computer records or to search for records based on partial information. In addition, the frequency vector string matching algorithm could be used to search communications for sensitive information that has been manipulated, obscured, or partially elided. In addition, an anomaly analysis is disclosed for comparing behavior patterns of one user against the behavior patterns of other users to detect anomalous behaviors.

    Abstract translation: 一种基于软件的安全代理,其挂接到计算机设备的操作系统中,以便不断地审核计算机设备的最终用户的行为和行为。 检测到的最终用户的动作可以存储在可以被连续监视的队列或日志文件中,以检测可能构成策略冲突和/或安全风险的行为模式。 当检测到可能构成违反政策和/或安全风险的行为模式时,可能触发事件。 还公开了一种频率矢量串匹配算法。 频率矢量串匹配算法可用于检测目标字符串中字母数字字符的存在或部分存在。 频率矢量字符串匹配算法可用于检测存储的计算机记录中的拼写错误或基于部分信息搜索记录。 此外,频率矢量串匹配算法可以用于搜索已经被操纵,模糊或部分消除的敏感信息的通信。 另外,公开了一种用于比较一个用户的行为模式与其他用户的行为模式以检测异常行为的异常分析。

    Method of manufacturing an adaptive AlGaN buffer layer
    9.
    发明申请
    Method of manufacturing an adaptive AlGaN buffer layer 有权
    制造自适应AlGaN缓冲层的方法

    公开(公告)号:US20060281238A1

    公开(公告)日:2006-12-14

    申请号:US11474431

    申请日:2006-06-26

    CPC classification number: H01L29/7783 H01L29/2003

    Abstract: A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

    Abstract translation: 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层,其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度,从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级,或者可以由不同掺杂剂浓度的子层构成,还提供缓冲层的高度电阻上部,对于随后的器件生长是理想的。 此外,缓冲层可以掺杂碳,并且可以在外延生长期间使用铝来吸收碳。

    Gallium nitride materials including thermally conductive regions
    10.
    发明申请
    Gallium nitride materials including thermally conductive regions 审中-公开
    包括导热区域的氮化镓材料

    公开(公告)号:US20050127397A1

    公开(公告)日:2005-06-16

    申请号:US11050598

    申请日:2005-02-03

    CPC classification number: H01L23/3735 H01L29/2003 H01L2924/0002 H01L2924/00

    Abstract: The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

    Abstract translation: 本发明包括提供包括导热区域的氮化镓材料和形成这种材料的方法。 氮化镓材料可用于形成半导体器件。 导热区域可以包括散热层和散热片。 热扩散层在比较大的区域中分配在设备操作期间产生的热量,以防止过度的局部加热。 散热器通常形成在设备的背面或顶部的两侧,并且便于对环境的散热。 对于装置来说,优选地包括连接到装置背面的散热器的散热层。 各种半导体器件可以利用本发明的特征,包括硅衬底上的器件和产生大量热量的器件,例如功率晶体管。

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