发明申请
- 专利标题： Ion beam apparatus and analysis method
- 专利标题（中）： 离子束装置及分析方法
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申请号： US11439541申请日： 2006-05-24
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公开(公告)号： US20060284115A1公开(公告)日： 2006-12-21
- 发明人: Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro , Hiroyasu Shichi , Satoshi Tomimatsu
- 申请人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro , Hiroyasu Shichi , Satoshi Tomimatsu
- 优先权： JP2005-153660 20050526
- 主分类号： H01J37/08
- IPC分类号： H01J37/08
摘要：
A technique is provided which can precisely form a deposition pile in a hole bored in the surface of a specimen. In ion beam apparatus and analysis method, the specimen surface is bored or a deposition pile is formed in the hole bored in the specimen surface. A measuring instrument is provided for measuring a height of the hole bored in the specimen surface or a height of the deposition pile formed in the hole. During fabrication of boring the hole in the specimen surface or fabrication of filling the hole bored in the specimen surface, an image of an area encompassing the hole and the depth of the hole or the height of the deposition pile are displayed.