发明申请
- 专利标题： Vertical diode formation in SOI application
- 专利标题（中）： SOI应用中的垂直二极管形成
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申请号： US11158022申请日： 2005-06-21
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公开(公告)号： US20060284260A1公开(公告)日： 2006-12-21
- 发明人: Byoung Min , Laegu Kang , Michael Khazhinsky
- 申请人： Byoung Min , Laegu Kang , Michael Khazhinsky
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A method for making a semiconductor device is provided. The method comprises (a) providing a semiconductor stack comprising a semiconductor substrate (203), a first semiconductor layer (205), and a first dielectric layer (207) disposed between the substrate and the first semiconductor layer; (b) forming a first trench in the first dielectric layer which exposes a portion of the substrate; (c) forming a first doped region (209) in the exposed portion of the substrate; and (d) forming anode (211) and cathode (213) regions in the first implant region.
公开/授权文献
- US07186596B2 Vertical diode formation in SOI application 公开/授权日：2007-03-06
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