发明申请
US20060284302A1 Semiconductor integrated circuit including a power supply, semiconductor system including a semiconductor integrated circuit, and method of forming a semiconductor integrated circuit 失效
包括电源的半导体集成电路,包括半导体集成电路的半导体系统和形成半导体集成电路的方法

  • 专利标题: Semiconductor integrated circuit including a power supply, semiconductor system including a semiconductor integrated circuit, and method of forming a semiconductor integrated circuit
  • 专利标题(中): 包括电源的半导体集成电路,包括半导体集成电路的半导体系统和形成半导体集成电路的方法
  • 申请号: US11447943
    申请日: 2006-06-07
  • 公开(公告)号: US20060284302A1
    公开(公告)日: 2006-12-21
  • 发明人: Kyu-Hyoun KimChang-Hyun Kim
  • 申请人: Kyu-Hyoun KimChang-Hyun Kim
  • 专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人: Samsung Electronics Co., Ltd.
  • 优先权: KR10-2005-0052739 20050618
  • 主分类号: H01L23/52
  • IPC分类号: H01L23/52
Semiconductor integrated circuit including a power supply, semiconductor system including a semiconductor integrated circuit, and method of forming a semiconductor integrated circuit
摘要:
Provided are a semiconductor integrated circuit including a power supply, a semiconductor system including the semiconductor integrated circuit, and a method of forming the semiconductor integrated circuit. The semiconductor integrated circuit includes: a semiconductor substrate on a surface of which a plurality of electrical circuits and a plurality of power pads are mounted; an insulation layer stacked on the semiconductor substrate; a first conductive layer connected to a first power pad by a first via and stacked on the insulation layer; a second conductive layer connected to a second power pad by a second via, stacked on the insulation layer, and separated from the first insulation layer; and a power generation layer stacked on the first conductive layer and the second conductive layer and that generates voltage.
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