发明申请
- 专利标题： Method for implantation of high dopant concentrations in wide band gap materials
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申请号： US11438887申请日： 2006-05-23
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公开(公告)号： US20060286784A1公开(公告)日： 2006-12-21
- 发明人: Igor Usov , Paul Arendt
- 申请人： Igor Usov , Paul Arendt
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/425
摘要：
A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C. This combination produces high concentrations of dopants, while minimizing the defect concentration.
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