发明申请
US20060289385A1 Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
失效
等离子体蚀刻方法和装置，控制程序和存储控制程序的计算机可读存储介质
- 专利标题： Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
- 专利标题（中）： 等离子体蚀刻方法和装置，控制程序和存储控制程序的计算机可读存储介质
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申请号： US11472379申请日： 2006-06-22
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公开(公告)号： US20060289385A1公开(公告)日： 2006-12-28
- 发明人: Akihiro Kikuchi
- 申请人： Akihiro Kikuchi
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2005-182084 20050622
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; B44C1/22 ; H01L21/306
摘要：
A plasma etching method and apparatus, a control program and a computer-readable storage medium storing the control program are provided. The method is provided for performing a plasma etching on a silicon oxide film through an amorphous carbon mask, wherein the plasma etching is performed by using an etching gas containing a fluorocarbon gas, an oxygen gas, a helium gas and at least one of an argon gas, a krypton gas and a xenon gas.
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