- 专利标题: High frequency control of a semiconductor switch
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申请号: US10570743申请日: 2004-08-25
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公开(公告)号: US20060290388A1公开(公告)日: 2006-12-28
- 发明人: Tobias Tolle , Thomas Durbaum , George Sauerlander , Toni Lopez
- 申请人: Tobias Tolle , Thomas Durbaum , George Sauerlander , Toni Lopez
- 申请人地址: NL EINDHOVEN
- 专利权人: KONINKLIJKE PHILIPS ELECTRONICS N.V.
- 当前专利权人: KONINKLIJKE PHILIPS ELECTRONICS N.V.
- 当前专利权人地址: NL EINDHOVEN
- 优先权: EP03102722.0 20030908
- 国际申请: PCT/IB04/51558 WO 20040825
- 主分类号: H03B1/00
- IPC分类号: H03B1/00
摘要:
Resonant gate driver circuits provide for efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate driver circuit is performed. This allows for a highly efficient and fast operation of the MOSFETs.
公开/授权文献
- US07602229B2 High frequency control of a semiconductor switch 公开/授权日:2009-10-13
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