A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.