公开(公告)号：US20060291277A1

公开(公告)日：2006-12-28

申请号：US11315347

申请日：2005-12-23

申请人： Beak-hyung Cho ,  Kwang-jin Lee ,  Mu-hui Park

发明人： Beak-hyung Cho ,  Kwang-jin Lee ,  Mu-hui Park

IPC分类号： G11C11/00

CPC分类号： G11C11/5678 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0028 ,  G11C2213/72

摘要： A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.

公开(公告)号：US07639558B2

公开(公告)日：2009-12-29

申请号：US11315347

申请日：2005-12-23

申请人： Beak-hyung Cho ,  Kwang-jin Lee ,  Mu-hui Park

发明人： Beak-hyung Cho ,  Kwang-jin Lee ,  Mu-hui Park

IPC分类号： G11C8/08 ,  G11C8/14

CPC分类号： G11C11/5678 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0028 ,  G11C2213/72

摘要： A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.

摘要翻译： 相变存储器件具有字线驱动器布局，其允许减小器件的核心区域的尺寸。 一方面，相变存储器件包括共享字线的多个存储单元块和驱动该字线的多个字线驱动器。 每个字线驱动器包括用于对字线预充电的预充电装置和用于放电字线的放电装置，并且其中预充电装置和放电装置交替地位于多个存储单元块之间。

公开(公告)号：US07986551B2

公开(公告)日：2011-07-26

申请号：US12690999

申请日：2010-01-21

申请人： Mu-hui Park ,  Beak-hyung Cho ,  Hyung-rok Oh

发明人： Mu-hui Park ,  Beak-hyung Cho ,  Hyung-rok Oh

IPC分类号： G11C11/00

CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0092

摘要： In a phase-change random access memory (PRAM) device, a write operation is performed by applying a set pulse to failed PRAM cells. The set pulse comprises a plurality of stages sequentially decreasing from a first current magnitude to a second current magnitude. The first current magnitude or the second current magnitude varies from one write loop to another.

摘要翻译： 在相变随机存取存储器（PRAM）装置中，通过将设置的脉冲施加到失败的PRAM单元来执行写入操作。 设置脉冲包括从第一电流幅度顺序地减小到第二电流幅度的多个级。 第一电流幅度或第二电流幅度从一个写入环路变化到另一个写入环路。

公开(公告)号：US07672156B2

公开(公告)日：2010-03-02

申请号：US11850125

申请日：2007-09-05

申请人： Mu-hui Park ,  Beak-hyung Cho ,  Hyung-rok Oh

发明人： Mu-hui Park ,  Beak-hyung Cho ,  Hyung-rok Oh

IPC分类号： G11C11/00

CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0092

摘要： In a phase-change random access memory (PRAM) device, a write operation is performed by applying a set pulse to failed PRAM cells. The set pulse comprises a plurality of stages sequentially decreasing from a first current magnitude to a second current magnitude. The first current magnitude or the second current magnitude varies from one write loop to another.

摘要翻译： 在相变随机存取存储器（PRAM）装置中，通过将设置的脉冲施加到失败的PRAM单元来执行写入操作。 设置脉冲包括从第一电流幅度顺序地减小到第二电流幅度的多个级。 第一电流幅度或第二电流幅度从一个写入环路变化到另一个写入环路。

公开(公告)号：US07349245B2

公开(公告)日：2008-03-25

申请号：US11486100

申请日：2006-07-14

申请人： Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

发明人： Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： G11C8/12 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

摘要： A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.

摘要翻译： 一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。 该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

公开(公告)号：US20070217253A1

公开(公告)日：2007-09-20

申请号：US11486100

申请日：2006-07-14

申请人： Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

发明人： Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

IPC分类号： G11C11/00

CPC分类号： G11C8/12 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

摘要： A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.

摘要翻译： 一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。 该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

公开(公告)号：US20100220522A1

公开(公告)日：2010-09-02

申请号：US12777298

申请日：2010-05-11

申请人： Hyung-rok Oh ,  Mu-hui Park ,  Du-eung Kim

发明人： Hyung-rok Oh ,  Mu-hui Park ,  Du-eung Kim

IPC分类号： G11C11/00 ,  G11C8/08

CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C13/004

摘要： A phase change random access memory is provided which includes a memory array including a plurality of phase change memory cells, and wordlines respectively connected to the phase change memory cells, where, in a read operation, a voltage of a wordline connected to a selected phase change memory cell is transitioned between at least two voltage stages having different voltage levels.

摘要翻译： 提供了一种相变随机存取存储器，其包括包括多个相变存储器单元的存储器阵列和分别连接到相变存储单元的字线，其中在读操作中连接到所选相位的字线的电压 改变存储单元在具有不同电压电平的至少两个电压级之间转变。

公开(公告)号：US20070091665A1

公开(公告)日：2007-04-26

申请号：US11580087

申请日：2006-10-13

申请人： Hyung-rok Oh ,  Mu-hui Park ,  Du-eung Kim

发明人： Hyung-rok Oh ,  Mu-hui Park ,  Du-eung Kim

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C13/004

摘要： A phase change random access memory is provided which includes a memory array including a plurality of phase change memory cells, and wordlines respectively connected to the phase change memory cells, where, in a read operation, a voltage of a wordline connected to a selected phase change memory cell is transitioned between at least two voltage stages having different voltage levels.

摘要翻译： 提供了一种相变随机存取存储器，其包括包括多个相变存储器单元的存储器阵列和分别连接到相变存储单元的字线，其中在读操作中连接到所选相位的字线的电压 改变存储单元在具有不同电压电平的至少两个电压级之间转变。

公开(公告)号：US20100124101A1

公开(公告)日：2010-05-20

申请号：US12499894

申请日：2009-07-09

申请人： Mu-hui Park ,  Soo-guil Yang ,  Kwang-ho Kim

发明人： Mu-hui Park ,  Soo-guil Yang ,  Kwang-ho Kim

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C13/004 ,  G11C7/08 ,  G11C13/00 ,  G11C13/0004 ,  G11C2013/0054

摘要： Provided is a phase-change random access memory device. The phase-change random access memory device includes a phase-change memory cell array having multiple phase-change memory cells, a sensing unit and a discharge unit. The sensing unit detects data, stored in a phase-change memory cell to be sensed of the multiple phase-change memory cells, during a sensing period. The discharge unit discharges at least one node of multiple nodes positioned on a sensing path between the phase-change memory cell array and the sensing unit during a period other than the sensing period.

摘要翻译： 提供了相变随机存取存储器件。 相变随机存取存储装置包括具有多个相变存储单元的相变存储单元阵列，感测单元和放电单元。 感测单元在感测周期期间检测存储在要被感测的多个相变存储器单元的相变存储单元中的数据。 放电单元在除了感测周期之外的时段期间放电位于相变存储单元阵列和感测单元之间的感测路径上的多个节点的至少一个节点。