- 专利标题： Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
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申请号： US11436198申请日： 2006-05-17
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公开(公告)号： US20060292719A1公开(公告)日： 2006-12-28
- 发明人: Anthony Lochtefeld , Matthew Currie , Zhiyuan Cheng , James Fiorenza , Glyn Braithwaite , Thomas Langdo
- 申请人： Anthony Lochtefeld , Matthew Currie , Zhiyuan Cheng , James Fiorenza , Glyn Braithwaite , Thomas Langdo
- 申请人地址： US NH Salem
- 专利权人： AmberWave Systems Corporation
- 当前专利权人： AmberWave Systems Corporation
- 当前专利权人地址： US NH Salem
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
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