发明申请
- 专利标题: Method for fabricating semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11473489申请日: 2006-06-22
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公开(公告)号: US20060292884A1公开(公告)日: 2006-12-28
- 发明人: Ki-Won Nam , Sei-Jin Kim
- 申请人: Ki-Won Nam , Sei-Jin Kim
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 优先权: KR2005-0056404 20050628
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/311
摘要:
A method for fabricating a semiconductor device includes forming a polysilicon layer, a silicide layer and a hard mask over a semiconductor substrate, etching the silicide layer using the hard mask as an etch barrier, shaping the silicide layer with a predetermined profile using a mixed gas, and etching the polysilicon layer using the hard mask as an etch barrier.