发明申请
US20060292892A1 Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices
有权
用于制造气隙半导体器件的牺牲苯并环丁烯共聚物
- 专利标题： Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices
- 专利标题（中）： 用于制造气隙半导体器件的牺牲苯并环丁烯共聚物
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申请号： US10544415申请日： 2004-01-30
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公开(公告)号： US20060292892A1公开(公告)日： 2006-12-28
- 发明人: Robert Kirchhoff , Jason Niu , Younfu Li , Kenneth Foster
- 申请人： Robert Kirchhoff , Jason Niu , Younfu Li , Kenneth Foster
- 国际申请： PCT/US04/02660 WO 20040130
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/31
摘要：
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12) alkyldiol diacrylate (such as bis [3-(4-benzocyclobutenyl)] 1,6 hexanediol diacrylate) and 1,3 bis 2 [4-benzocyclobutenyl (ethenyl)] benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2 [4-benzocyclobutenyl(ethenyl)] benzene.
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