公开(公告)号：US20060292892A1

公开(公告)日：2006-12-28

申请号：US10544415

申请日：2004-01-30

申请人： Robert Kirchhoff ,  Jason Niu ,  Younfu Li ,  Kenneth Foster

发明人： Robert Kirchhoff ,  Jason Niu ,  Younfu Li ,  Kenneth Foster

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/02118 ,  C08F212/34 ,  C08F222/10 ,  H01L21/312 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12) alkyldiol diacrylate (such as bis [3-(4-benzocyclobutenyl)] 1,6 hexanediol diacrylate) and 1,3 bis 2 [4-benzocyclobutenyl (ethenyl)] benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2 [4-benzocyclobutenyl(ethenyl)] benzene.

摘要翻译： 一种通过以下步骤在半导体结构内形成气隙的方法：（a）使用牺牲聚合物占据半导体结构中的空间; （b）加热半导体结构以分解牺牲聚合物，在半导体结构内留下空隙，其中步骤（a）的牺牲聚合物是双[3-（4-苯并环丁烯基）] 1，n（n = 2-12）二丙烯酸烷基二醇酯（例如双[3-（4-苯并环丁烯基）] 1,6-己二醇二丙烯酸酯）和1,3-双2 [4-苯并环丁烯基（乙烯基）]苯。 另外，具有位于导体线之间的牺牲聚合物的半导体结构，其中牺牲聚合物是双[3-（4-苯并环丁烯基）] 1，n（n = 2-12）烷基二醇二丙烯酸酯和1,3 双[4-苯并环丁烯基（乙烯基）]苯。

公开(公告)号：US20060246681A1

公开(公告)日：2006-11-02

申请号：US10544428

申请日：2004-01-30

申请人： Youngfu Li ,  Robert Kirchhoff ,  Jason Niu ,  Kenneth Foster

发明人： Youngfu Li ,  Robert Kirchhoff ,  Jason Niu ,  Kenneth Foster

IPC分类号： H01L21/76

CPC分类号： H01L21/02118 ,  H01L21/312 ,  H01L21/7682

摘要： A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.