发明申请
- 专利标题： Semiconductor device and method for forming the same
- 专利标题（中）： 半导体装置及其形成方法
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申请号： US11517422申请日： 2006-09-08
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公开(公告)号： US20070001198A1公开(公告)日： 2007-01-04
- 发明人: Sang Lee
- 申请人： Sang Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2004-0063167 20040811
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/745
摘要：
The present invention is related to semiconductor device and method for manufacturing the same. In accordance with the semiconductor device and method for manufacturing the same, at least one opening extending between LDD regions and exposing a buried insulating layer is formed so that a gate electrode surrounds the surface of a channel region. This structure allows the formation of a relatively a thick channel region and decreases the sensitivity of characteristics of the device dependent upon the thickness of the channel region.
公开/授权文献
- US07683406B2 Semiconductor device and method for forming the same 公开/授权日：2010-03-23
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