发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US11425545申请日： 2006-06-21
-
公开(公告)号： US20070001225A1公开(公告)日： 2007-01-04
- 发明人: Hideto OHNUMA , Shigeharu MONOE
- 申请人： Hideto OHNUMA , Shigeharu MONOE
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2005-192302 20050630
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/12
摘要：
To provide a manufacturing method in which LDD regions with different widths are formed in a self-aligned manner, and the respective widths are precisely controlled in accordance with each circuit. By using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-transparent film, the width of a region with a small thickness of a gate electrode can be freely set, and the widths of two LDD regions capable of being formed in a self-aligned manner with the gate electrode as a mask can be different in accordance with each circuit. In one TFT, both of two LDD regions with different widths overlap a gate electrode.
公开/授权文献
- US07807516B2 Semiconductor device and manufacturing method of the same 公开/授权日：2010-10-05
信息查询
IPC分类:
