发明申请
US20070001246A1 Gate electrode with double diffusion barrier and fabrication method of semiconductor device including the same
审中-公开
具有双扩散阻挡层的栅电极及包括其的半导体器件的制造方法
- 专利标题： Gate electrode with double diffusion barrier and fabrication method of semiconductor device including the same
- 专利标题（中）： 具有双扩散阻挡层的栅电极及包括其的半导体器件的制造方法
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申请号： US11262944申请日： 2005-11-01
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公开(公告)号： US20070001246A1公开(公告)日： 2007-01-04
- 发明人: Kwan-Yong Lim , Min-Gyu Sung , Heung-Jae Cho , Hong-Seon Yang , Seung-Ryong Lee
- 申请人： Kwan-Yong Lim , Min-Gyu Sung , Heung-Jae Cho , Hong-Seon Yang , Seung-Ryong Lee
- 专利权人： HYNIX SEMICONDUCTOR, INC.
- 当前专利权人： HYNIX SEMICONDUCTOR, INC.
- 优先权： KR2005-0058145 20050630
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/3205
摘要：
A gate electrode with a double diffusion barrier and a fabrication method of a semiconductor device including the same are provided. The gate electrode of a semiconductor device includes: a silicon electrode; a double diffusion barrier formed on the silicon electrode and including at least a crystalline tungsten nitride-based layer; and a metal electrode formed on the double diffusion barrier.
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