ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR STRUCTURE

Invention Application

US20070004150A1 ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR STRUCTURE 有权

Title translation: 静电放电保护半导体结构

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Patent Title: ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR STRUCTURE
Patent Title (中): 静电放电保护半导体结构
Application No.: US11427773

Application Date: 2006-06-29
Publication No.: US20070004150A1

Publication Date: 2007-01-04
Inventor: Chih-Feng Huang , Tuo-Hsin Chien , Jenn-yu Lin , Ta-yung Yang
Applicant: Chih-Feng Huang , Tuo-Hsin Chien , Jenn-yu Lin , Ta-yung Yang
Applicant Address: TW Taipei Hsien
Assignee: SYSTEM GENERAL CORP.
Current Assignee: SYSTEM GENERAL CORP.
Current Assignee Address: TW Taipei Hsien
Priority: CN200510082018.1 20050704
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L23/62

ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR STRUCTURE

Abstract:

An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit finction and adjustable discharge capacity. The single-trigger or multi-trigger semiconductor structure may be fabricated by using the conventional semiconductor process, and can be applied to IC semiconductor design and to effectively protect the important semiconductor devices and to prevent the semiconductor devices from ESD damage. In particular, the present invention can meet the requirements of high power semiconductor device and has better protection function compared to conventional ESD protection circuit. In the present invention, a plurality of N-wells or P-wells connected in parallel are used to adjust the discharge capacity of various wells in the P-substrate so as to improve the ESD protection capability and meet different power standards.

Abstract(Chinese):

提供具有可调单触发或多触发电压的静电放电（ESD）保护装置。半导体结构具有多级保护半导体电路的功能和可调放电容量。单触发或多触发半导体结构可以通过使用传统的半导体工艺制造，并且可以应用于IC半导体设计并且有效地保护重要的半导体器件并且防止半导体器件受到ESD损坏。特别地，本发明可以满足大功率半导体器件的要求，与传统的ESD保护电路相比具有更好的保护功能。在本发明中，使用并联连接的多个N阱或P阱来调整P基板中的各个阱的放电容量，以提高ESD保护能力并满足不同的功率标准。

Public/Granted literature

US07615826B2 Electrostatic discharge protection semiconductor structure Public/Granted day:2009-11-10

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺