发明申请
- 专利标题： Post polish anneal of atomic layer deposition barrier layers
- 专利标题（中）： 原子层沉积阻挡层的后抛光退火
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申请号： US11173858申请日： 2005-06-30
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公开(公告)号： US20070004230A1公开(公告)日： 2007-01-04
- 发明人: Steven Johnston , Kevin O'Brien , Sridhar Balakrishnan
- 申请人： Steven Johnston , Kevin O'Brien , Sridhar Balakrishnan
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.
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