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公开(公告)号：US20070004230A1
公开(公告)日：2007-01-04
申请号：US11173858
申请日：2005-06-30
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02074 , H01L21/0228 , H01L21/3105 , H01L21/3141 , H01L21/76807
摘要： A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.
摘要翻译： 公开了一种用于形成半导体器件的方法，其中在随后对半导体器件进行图案化之前，由ILD吸收的原子层沉积（ALD）前体物质和/或副产物被除气和/或中和，从而提高随后对 在ILD中形成互连结构。
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2.发明申请Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 有权用于金属膜在互连应用中的化学相沉积的有机金属前体公开(公告)号：US20060223300A1
公开(公告)日：2006-10-05
申请号：US11096860
申请日：2005-03-31
申请人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
发明人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L21/76873
摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
摘要翻译： 在此描述利用有机金属前体形成薄膜的化学相沉积方法。 有机金属前体可以包括单个金属中心或多个金属中心。 化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。 这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层 。
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公开(公告)号：US20050181631A1
公开(公告)日：2005-08-18
申请号：US11101688
申请日：2005-04-08
申请人： Steven Johnston , Kevin O'Brien
发明人： Steven Johnston , Kevin O'Brien
IPC分类号： H01L21/033 , H01L21/316 , H01L21/768 , H01L21/469
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02351 , H01L21/0337 , H01L21/76807 , H01L21/7682 , H01L21/76825 , H01L21/76829 , H01L21/76832
摘要： An interlayer dielectric may be exposed to a gas cluster ion beam to densify an upper layer of the interlayer dielectric. As a result, the upper layer of the interlayer dielectric may be densified without separate deposition steps and without the need for etch stops that may adversely affect the capacitance of the overall structure.
摘要翻译： 可以将层间电介质暴露于气体簇离子束以致致密层间电介质的上层。 结果，层间电介质的上层可以在没有单独的沉积步骤的情况下被致密化，并且不需要可能不利地影响整个结构的电容的蚀刻停止。
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4.发明授权Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 有权用于金属膜在互连应用中的化学相沉积的有机金属前体公开(公告)号：US07220671B2
公开(公告)日：2007-05-22
申请号：US11096860
申请日：2005-03-31
申请人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
发明人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L21/76873
摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
摘要翻译： 在此描述利用有机金属前体形成薄膜的化学相沉积方法。 有机金属前体可以包括单个金属中心或多个金属中心。 化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。 这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层 。
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公开(公告)号：US20070075427A1
公开(公告)日：2007-04-05
申请号：US11240005
申请日：2005-09-30
申请人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
发明人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译： 形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。
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公开(公告)号：US20070298608A1
公开(公告)日：2007-12-27
申请号：US11897862
申请日：2007-08-31
申请人： Steven Johnston , Valery Dubin , Michael McSwiney , Peter Moon
发明人： Steven Johnston , Valery Dubin , Michael McSwiney , Peter Moon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
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7.发明申请Uniformity in batch spray processing using independent cassette rotation 审中-公开使用独立的盒式磁带旋转进行批量喷雾处理的均匀性公开(公告)号：US20060131276A1
公开(公告)日：2006-06-22
申请号：US11015069
申请日：2004-12-17
申请人： Steven Johnston , Chin-Chang Cheng , Soley Ozer
发明人： Steven Johnston , Chin-Chang Cheng , Soley Ozer
IPC分类号： C03C15/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67051
摘要： A method for performing a batch spray comprises providing a substrate mounted upon a turntable, rotating the turntable to revolve the substrate around a center axis of the turntable, rotating the substrate independently of the turntable, wherein the rotating of the substrate occurs simultaneously with the rotating of the turntable, and spraying a chemical onto the substrate from at least one fixed location. Rotating the substrate independently of the turntable allows the entire circumference of the substrate to be exposed to the chemical spray. In one implementation, the substrate may be loaded into a process cassette, the process cassette may be mounted on the turntable, and the process cassette may rotate independently of the turntable while the turntable is rotating.
摘要翻译： 执行批量喷雾的方法包括提供安装在转盘上的基板，旋转转台以围绕转台的中心轴线旋转基板，独立于转台旋转基板，其中基板的旋转与旋转 的转盘，并且从至少一个固定位置将化学品喷涂到基底上。 独立于转台旋转基板允许基板的整个周边暴露于化学喷雾。 在一个实施方案中，基板可以被装载到处理盒中，处理盒可以安装在转台上，并且处理盒可以在转盘旋转的同时独立于转台旋转。
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公开(公告)号：US11670921B2
公开(公告)日：2023-06-06
申请号：US16627419
申请日：2018-06-28
申请人： Steven Johnston
发明人： Steven Johnston
IPC分类号： H02G1/08
摘要： A device for capturing a line passed into a cavity on a first side of a structure and retrieving the line through to a second side of the structure, the device comprising: (a) a first conduit adapted to define a pathway between the first and second sides of the structure and including: first and second lateral guide members that are opposed and each define a first surface that extends into and along the inside of the first conduit; (b) a mounting member for the first conduit; and (c) a resiliently flexible member capable of being passed through the first conduit and defining a stem portion and a loop portion in the cavity to capture said line.
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9.发明申请PROCESS FOR PREPARING A TEST CASTING AND TEST CASTING PREPARED BY THE PROCESS 失效制备过程中制备的测试铸件和测试铸件的方法公开(公告)号：US20110056643A1
公开(公告)日：2011-03-10
申请号：US12554330
申请日：2009-09-04
摘要： A process for preparing a test casting useful for predicting the severity of skin that will form on a casting made of compacted graphite iron or ductile iron and the test casting prepared by the process.
摘要翻译： 一种制备用于预测在由压实的石墨铁或球墨铸铁制成的铸件上形成的皮肤的严重性的测试铸件的方法和通过该方法制备的测试铸件。
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10.发明授权Process for preparing a test casting and test casting prepared by the process 失效用于制备由该方法制备的测试铸造和测试铸件的方法公开(公告)号：US08056604B2
公开(公告)日：2011-11-15
申请号：US12554330
申请日：2009-09-04
IPC分类号： B22D46/00
摘要： A test casting is useful for predicting the severity of skin that will form when compacted graphite iron or ductile iron is cast using a selected foundry mix. The mold is made from the foundry mix and has a gating system with at least two ingates, and with a hollow cylindrical shape associated with each ingate. The hollow cylindrical shapes are substantially the same height, but the diameter of each varies by at least 20% from the diameter of any of the other cylindrical shapes. Molten metal poured into the gating system fills each of the hollow cylindrical shapes. When the metal cools and solidifies, a solid cylinder of the metal is produced in each hollow cylindrical shape. The solid metal cylinders, each with a distinct diameter, are cut and inspected to measure the skin formed thereon.
摘要翻译： 测试铸件可用于预测当使用选定的铸造混合物铸造压实的石墨铁或球墨铸铁时将形成的皮肤的严重性。 模具由铸造混合物制成并且具有至少两个浇口的浇注系统，并且具有与每个浇口相关联的中空圆柱形形状。 中空的圆柱形形状基本上是相同的高度，但是每个直径从任何其它圆柱形状的直径变化至少20％。 浇注浇注系统中的熔融金属填充每个中空圆柱形状。 当金属冷却并固化时，在每个中空圆筒形状中制造金属的实心圆柱体。 每个具有不同直径的固体金属圆筒被切割和检查以测量其上形成的皮肤。
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