发明申请
- 专利标题: Fuse breakdown method adapted to semiconductor device
- 专利标题(中): 适用于半导体器件的保险丝击穿法
-
申请号: US11390413申请日: 2006-03-28
-
公开(公告)号: US20070007621A1公开(公告)日: 2007-01-11
- 发明人: Masayoshi Omura , Yasuhiko Sekimoto
- 申请人: Masayoshi Omura , Yasuhiko Sekimoto
- 申请人地址: JP Hamamatsu-shi
- 专利权人: YAMAHA CORPORATION
- 当前专利权人: YAMAHA CORPORATION
- 当前专利权人地址: JP Hamamatsu-shi
- 优先权: JPP2005-099404 20050330; JPP2005-101481 20050331; JPP2005-103642 20050331
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L21/82
摘要:
A plurality of pulses each having relatively low energy are consecutively applied to a subject fuse to cause breakdown, wherein the total energy of pulses is set in light of a prescribed breakdown threshold, which is calculated in advance. The subject fuse has a pair of terminals and an interconnection portion that is narrowly constricted in the middle so as to realize fuse breakdown with ease. A pulse generator generates pulses, which are repeatedly applied to the subject fuse by way of a transistor; then, it stops generating pulses upon detection of fuse breakdown. Side wall spacers are formed on side walls of fuses, which are processed in a tapered shape so as to reduce thermal stress applied to coating insulating films. In addition, pulse energy is appropriately determined so as to cause electro-migration in the subject fuse, which is thus increased in resistance without causing instantaneous meltdown or evaporation.
信息查询
IPC分类: