发明申请
US20070007623A1 Method to fabricate horizontal air columns underneath metal inductor
有权
在金属电感器下制造水平空气柱的方法
- 专利标题： Method to fabricate horizontal air columns underneath metal inductor
- 专利标题（中）： 在金属电感器下制造水平空气柱的方法
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申请号： US11519103申请日： 2006-09-11
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公开(公告)号： US20070007623A1公开(公告)日： 2007-01-11
- 发明人: Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
- 申请人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
- 专利权人： Chartered Semiconductor Manufacturing Ltd.,National University of Singapore
- 当前专利权人： Chartered Semiconductor Manufacturing Ltd.,National University of Singapore
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.
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