发明申请
US20070012944A1 GaN-based light emitting-diode chip and a method for producing same
审中-公开
GaN基发光二极管芯片及其制造方法
- 专利标题: GaN-based light emitting-diode chip and a method for producing same
- 专利标题(中): GaN基发光二极管芯片及其制造方法
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申请号: US11508504申请日: 2006-08-23
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公开(公告)号: US20070012944A1公开(公告)日: 2007-01-18
- 发明人: Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow
- 申请人: Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow
- 优先权: DE10026255.4 20000526; DE10020464.3 20000426
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.
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