发明申请
US20070012944A1 GaN-based light emitting-diode chip and a method for producing same 审中-公开
GaN基发光二极管芯片及其制造方法

GaN-based light emitting-diode chip and a method for producing same
摘要:
An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.
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