公开(公告)号：US08809086B2

公开(公告)日：2014-08-19

申请号：US13398425

申请日：2012-02-16

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L21/20

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US08426843B2

公开(公告)日：2013-04-23

申请号：US12680620

申请日：2008-08-28

申请人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

发明人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

IPC分类号： H01L33/30

CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.

摘要翻译： 描述了具有用于产生第一波长（λ1）和再发射层（3）的辐射的有源层（2）的辐射发射半导体本体（1），其包括量子阱结构（4），其包括量子层结构 （5）和阻挡层结构（6）。 再发射层旨在通过吸收势垒层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

公开(公告)号：US20120248941A1

公开(公告)日：2012-10-04

申请号：US13074094

申请日：2011-03-29

申请人： Alexandre Augusto Shirakawa ,  Paul Bradley ,  Dariusz Burak ,  Stefan Bader ,  Chris Feng

发明人： Alexandre Augusto Shirakawa ,  Paul Bradley ,  Dariusz Burak ,  Stefan Bader ,  Chris Feng

IPC分类号： H03H9/17 ,  H01L41/047

CPC分类号： H03H3/02 ,  H03H9/132 ,  H03H9/585 ,  H03H2003/0428

摘要： A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator includes further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.

摘要翻译： 层叠的体声波谐振器包括堆叠在第一电极上的第一压电层，堆叠在第一压电层上的第二电极; 堆叠在第二电极上的第二压电层和堆叠在第二压电层上的第三电极。 所述层叠的体声波谐振器还包括形成在所述第一，第二和第三电极中的至少一个的表面上的内部部分中的内部凸起区域，以及沿所述至少一个表面上的外周边形成的外部凸起区域 第一，第二或第三电极之一。 外部凸起区域围绕内部凸起区域并且在内部升高区域和外部凸起区域之间限定间隙。

公开(公告)号：US20120218059A1

公开(公告)日：2012-08-30

申请号：US13208883

申请日：2011-08-12

申请人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

发明人： Dariusz BURAK ,  Stefan BADER ,  Alexandre SHIRAKAWA ,  Phil NIKKEL

IPC分类号： H03H9/56

CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/585 ,  H03H9/587 ,  H03H9/589

摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在第一层中并具有与BAW谐振器的有源区域接壤的周边的空腔; 与空腔接合的分布布拉格反射器（DBR），其中第一层是DBR的层之一; 设置在所述基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

公开(公告)号：US20100200864A1

公开(公告)日：2010-08-12

申请号：US12648566

申请日：2009-12-29

申请人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

发明人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L33/32

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

公开(公告)号：US20090130787A1

公开(公告)日：2009-05-21

申请号：US12290097

申请日：2008-10-27

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L21/20

CPC分类号： H01L33/20 ,  H01L33/46

摘要： Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

摘要翻译： 用于制造发射电磁辐射的半导体芯片的方法，其中为了提高发射电磁辐射的半导体芯片的光输出，纹理反射表面被集成在半导体芯片的p侧上。 半导体芯片具有基于GaN的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域。 面向辐射产生区域的p导电半导体层的表面设置有三维金字塔状结构。 镜面层布置在整个这个有纹理的表面上。 在镜面层和导电性半导体层之间形成纹理反射面。

公开(公告)号：US07446341B2

公开(公告)日：2008-11-04

申请号：US10669227

申请日：2003-09-24

申请人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

发明人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

IPC分类号： H01L27/15

CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/46

摘要： A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

摘要翻译： 具有半导体本体（1）的辐射发射半导体部件具有活动区域（2），其中为了电接触连接，将图案化接触层（3）施加在半导体本体的表面上 。 间隙（4）分布在接触层（3）上，并且被提供用于在表面上形成未被接触层（3）覆盖的自由区域（5）。 自由区域（5）用镜子（6）覆盖。 接触连接和反射的两个功能的分离使得可以实现特别高的部件性能。

公开(公告)号：US07106090B2

公开(公告)日：2006-09-12

申请号：US11014677

申请日：2004-12-16

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： G01R31/00 ,  G01R31/26 ,  G01R31/28

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20060011925A1

公开(公告)日：2006-01-19

申请号：US11065769

申请日：2005-02-25

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

IPC分类号： H01L29/22

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。

公开(公告)号：US20050282373A1

公开(公告)日：2005-12-22

申请号：US11067349

申请日：2005-02-25

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01L21/28

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。