发明申请
- 专利标题： Semiconductor device including memory cells and current limiter
- 专利标题（中）： 半导体器件包括存储单元和限流器
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申请号： US11181983申请日： 2005-07-15
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公开(公告)号： US20070014157A1公开(公告)日： 2007-01-18
- 发明人: Chun-Hsiung Hung , Chuan-Ying Yu , Han-Sung Chen , Nai-Ping Kuo , Ching-Chung Lin , Kuen-Long Chang
- 申请人： Chun-Hsiung Hung , Chuan-Ying Yu , Han-Sung Chen , Nai-Ping Kuo , Ching-Chung Lin , Kuen-Long Chang
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/34
摘要：
A memory cell array, such as an EEPROM flash memory array, includes a current limiting circuit that limits a sum of leakage currents from nonselected memory cells during operation of the array, such as during a programming operation.
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