发明申请
US20070015313A1 Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
审中-公开
半导体激光二极管的基座,其制造方法以及使用该基座的半导体激光二极管组件
- 专利标题: Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
- 专利标题(中): 半导体激光二极管的基座,其制造方法以及使用该基座的半导体激光二极管组件
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申请号: US11477911申请日: 2006-06-30
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公开(公告)号: US20070015313A1公开(公告)日: 2007-01-18
- 发明人: Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
- 申请人: Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR2003-14613 20030308
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/302 ; H01L21/461
摘要:
Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
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