公开(公告)号：US20070015313A1

公开(公告)日：2007-01-18

申请号：US11477911

申请日：2006-06-30

申请人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

发明人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

摘要翻译： 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

公开(公告)号：US07092420B2

公开(公告)日：2006-08-15

申请号：US10732241

申请日：2003-12-11

申请人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

发明人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

IPC分类号： H01S5/00

CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

摘要翻译： 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

公开(公告)号：US20050002428A1

公开(公告)日：2005-01-06

申请号：US10732241

申请日：2003-12-11

申请人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

发明人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

IPC分类号： H01S5/022 ,  H01S5/02 ,  H01S5/024 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S3/04 ,  H01S5/00

CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

摘要翻译： 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

公开(公告)号：US06657237B2

公开(公告)日：2003-12-02

申请号：US10012309

申请日：2001-12-12

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L3300

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

公开(公告)号：US07566578B2

公开(公告)日：2009-07-28

申请号：US10673251

申请日：2003-09-30

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

公开(公告)号：US07219825B2

公开(公告)日：2007-05-22

申请号：US10949522

申请日：2004-09-27

申请人： Won-kyoung Choi ,  Su-hee Chae ,  Joon-seop Kwak

发明人： Won-kyoung Choi ,  Su-hee Chae ,  Joon-seop Kwak

IPC分类号： B23K35/14 ,  B23K31/02

CPC分类号： B23K35/262 ,  B23K35/001 ,  H01L24/10 ,  H01L24/81 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： Provided are a solder bump, a method of manufacturing the same, and a method of bonding a light emitting device using the method of manufacturing the solder bump. In particular, the solder bump is formed of a compound including a first element through a third element, in which the first and third elements together form a compound having a plurality of intermediate phases and solidus lines.

摘要翻译： 提供了一种焊料凸块，其制造方法以及使用制造焊料凸块的方法来接合发光器件的方法。 特别地，焊料凸块由包括通过第三元件的第一元件的化合物形成，其中第一和第三元素一起形成具有多个中间相和固相线的化合物。

公开(公告)号：US07126165B2

公开(公告)日：2006-10-24

申请号：US10938556

申请日：2004-09-13

申请人： Joon-seop Kwak ,  Jong-wan Kim ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Jong-wan Kim ,  Su-hee Chae

IPC分类号： H01L33/00 ,  H01L23/48

CPC分类号： H01S5/02272 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2224/05599

摘要： Provided is a light emitting device assembly. The light emitting device assembly includes a submount including bumps, each having a bonded surface and a lateral surface surrounding the bonded surface; and a light emitting device including pads, each having a bonded surface corresponding to a bonded surface of a corresponding bump. Herein, edges of the bonded surface of each of the bumps are spaced a predetermined distance inward from edges of a corresponding pad.

摘要翻译： 提供了一种发光器件组件。 发光器件组件包括：底座，其包括凸起，每个凸起具有接合表面和围绕接合表面的侧表面; 以及包括焊盘的发光器件，每个焊盘具有对应于相应凸块的接合表面的接合表面。 这里，每个凸起的接合表面的边缘与相应的焊盘的边缘向内间隔预定的距离。

公开(公告)号：US08324004B2

公开(公告)日：2012-12-04

申请号：US12495000

申请日：2009-06-30

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

摘要翻译： 提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。 在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触 最外层的材料层通过高阻基板的蚀刻区域露出。 可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

公开(公告)号：US20090325334A1

公开(公告)日：2009-12-31

申请号：US12495000

申请日：2009-06-30

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

摘要翻译： 提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。 在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触 最外层的材料层通过高阻基板的蚀刻区域露出。 可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

公开(公告)号：US07180927B2

公开(公告)日：2007-02-20

申请号：US10732240

申请日：2003-12-11

申请人： Joon-seop Kwak ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Su-hee Chae

IPC分类号： H01S5/00

CPC分类号： H01S5/0224 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22

摘要： Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.