发明申请
- 专利标题: INTEGRATED CIRCUIT AND FABRICATION PROCESS
- 专利标题(中): 集成电路和制造工艺
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申请号: US11533939申请日: 2006-09-21
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公开(公告)号: US20070015326A1公开(公告)日: 2007-01-18
- 发明人: Olivier Menut , Yvon Gris
- 申请人: Olivier Menut , Yvon Gris
- 申请人地址: FR Montrouge
- 专利权人: STMicroelectronics S.A.
- 当前专利权人: STMicroelectronics S.A.
- 当前专利权人地址: FR Montrouge
- 优先权: FR01/00419 20010112
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device includes a substrate having a lower region containing at least one buried capacitive elementary trench forming the elementary storage capacitor, and an elementary well located above the lower region of the substrate and isolated laterally by a lateral electrical isolation region. The elementary active component is located in the elementary well or in and on the elementary well. The capacitive elementary trench is located under the elementary active component and is in electrical contact with the elementary well. In one preferred embodiment, the lateral electrical isolation region is formed by a trench filled with a dielectric material and has a greater depth than that of the elementary well. Also provided is a method for fabricating an integrated circuit that includes a semiconductor device for storing charge.
公开/授权文献
- US07470585B2 Integrated circuit and fabrication process 公开/授权日:2008-12-30