- 专利标题： MSM binary switch memory device
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申请号： US11184660申请日： 2005-07-18
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公开(公告)号： US20070015328A1公开(公告)日： 2007-01-18
- 发明人: Sheng Hsu , Tingkai Li
- 申请人： Sheng Hsu , Tingkai Li
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top electrode, a semiconductor layer overlies the MSM bottom electrode, and an MSM top electrode overlies the semiconductor layer. The MSM bottom electrode can be a material such as Pt, Ir, Au, Ag, TiN, or Ti. The MSM top electrode can be a material such as Pt, Ir, Au, TiN, Ti, or Al. The semiconductor layer can be amorphous Si, ZnO2, or InO2.
公开/授权文献
- US07303971B2 MSM binary switch memory device 公开/授权日：2007-12-04
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