发明申请
- 专利标题: Vertical GaN-based LED and method of manufacturing the same
- 专利标题(中): 垂直GaN基LED及其制造方法
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申请号: US11490231申请日: 2006-07-21
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公开(公告)号: US20070018177A1公开(公告)日: 2007-01-25
- 发明人: Jae Lee , Hee Choi , Jeong Oh , Su Lee
- 申请人: Jae Lee , Hee Choi , Jeong Oh , Su Lee
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 优先权: KR10-2005-0066616 20050722
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
公开/授权文献
- US07259399B2 Vertical GaN-based LED and method of manufacturing the same 公开/授权日:2007-08-21