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公开(公告)号：US20080241982A1
公开(公告)日：2008-10-02
申请号：US11878503
申请日：2007-07-25
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
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公开(公告)号：US20070018187A1
公开(公告)日：2007-01-25
申请号：US11490254
申请日：2006-07-21
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。
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3.发明申请Vertically-structured gan-based light emitting diode and method of manufacturing the same 有权垂直结构的基于发光二极管的发光二极管及其制造方法公开(公告)号：US20060273341A1
公开(公告)日：2006-12-07
申请号：US11430990
申请日：2006-05-10
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
摘要翻译： 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。
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公开(公告)号：US20070018177A1
公开(公告)日：2007-01-25
申请号：US11490231
申请日：2006-07-21
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极。 在n电极下形成AlGaN层。 在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。 在GaN基LED结构下方形成p电极。 导电性基板形成在p电极的下方。
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公开(公告)号：US20060261367A1
公开(公告)日：2006-11-23
申请号：US11435751
申请日：2006-05-18
IPC分类号： H01L33/00
摘要： The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGa1-xN layer, where 0
摘要翻译： 本发明提供一种氮化物半导体器件及其制造方法。 在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。 此外，在本发明的氮化物半导体器件中，其中0
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6.发明申请Filter for plasma display panel with good re-workability and plasma display panel comprising the same 审中-公开具有良好的再加工性的等离子体显示面板的过滤器和包括其的等离子体显示面板公开(公告)号：US20060159936A1
公开(公告)日：2006-07-20
申请号：US11333313
申请日：2006-01-18
IPC分类号： B32B27/30
CPC分类号： H01J11/44 , H01J11/10 , H01J2211/446 , Y10T428/31663 , Y10T428/31935
摘要： This invention relates to a filter for a plasma display panel having excellent re-workability, durability, and reliability and a plasma display panel including the same. The filter for a plasma display panel of this invention is characterized by including an acrylic pressure-sensitive adhesive composition layer having adhesion after the lapse of a predetermined time period that is at least 1.5 times as great as initial adhesion. Since the inventive filter for a plasma display panel has low initial adhesion, when a defect occurs in a process of attaching the filter for a plasma display panel to an upper glass plate of the panel, a separation process may be easily conducted, and also adhesion increases with the lapse of time, thus exhibiting good durability and reliability without air bubbling and peeling.
摘要翻译： 本发明涉及一种具有优异的再加工性，耐久性和可靠性的等离子体显示面板用滤波器和包括该等离子体显示面板的等离子体显示面板。 本发明的等离子体显示面板用过滤器的特征在于，在经过预定时间段之后具有至少是初始粘合力的1.5倍的粘合性的丙烯酸系压敏粘合剂组合物层。 由于用于等离子体显示面板的本发明的滤光器具有低的初始粘附性，所以当在用于等离子体显示面板的过滤器附着到面板的上部玻璃板的过程中发生缺陷时，可以容易地进行分离过程，并且还附着 随着时间的推移而增加，因此在没有气泡和剥离的情况下表现出良好的耐久性和可靠性。
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7.发明申请公开(公告)号：US20060159915A1
公开(公告)日：2006-07-20
申请号：US11333319
申请日：2006-01-18
CPC分类号： C09J153/00 , C08L71/00 , C08L83/12 , C08L2666/02 , C08L2666/04 , C08L2666/14 , C09J7/385 , C09J133/066 , C09J151/085 , C09J2201/606 , H01J2211/44 , Y10T428/2891
摘要： This invention relates to an acrylic pressure-sensitive adhesive composition, including a) 100 parts by weight of an acrylic copolymer containing a hydroxy group without a carboxyl group; b) 0.01˜10 parts by weight of a cross-linkging agent; and c) 0.01˜5 parts by weight of a polyether modified polydimethylsiloxane copolymer having HLB of 4˜13 and having the structure of Formula 1, and to an adhesive sheet formed thereby. The adhesive composition and adhesive sheet according to this invention may exhibit excellent re-workability, durability, and reliability.
摘要翻译： 本发明涉及一种丙烯酸类压敏粘合剂组合物，其包括a）100重量份含有不含羧基的羟基的丙烯酸共聚物; b）0.01〜10重量份的交联剂; 和c）0.01〜5重量份HLB为4〜13，具有式1结构的聚醚改性聚二甲基硅氧烷共聚物和由其形成的粘合片。 根据本发明的粘合剂组合物和粘合片可以表现出优异的再加工性，耐久性和可靠性。
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公开(公告)号：US20070114564A1
公开(公告)日：2007-05-24
申请号：US11602285
申请日：2006-11-21
IPC分类号： H01L33/00
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。
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9.发明申请公开(公告)号：US20060277568A1
公开(公告)日：2006-12-07
申请号：US11432718
申请日：2006-05-12
CPC分类号： G06Q30/02
摘要： Method for making compensation for advertising on a display device of a home appliance including the steps of displaying a predetermined advertisement data on a display device of the home appliance, producing a display result data on a result of the display of the advertisement data, accumulating electronic cash of a predetermined amount for the user of the home appliance according to the display result data.
摘要翻译： 在家用电器的显示装置上进行广告补偿的方法，包括以下步骤：在家用电器的显示装置上显示预定的广告数据，产生关于广告数据的显示结果的显示结果数据，累积电子 根据显示结果数据，用于家用电器的用户的预定金额的现金。
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公开(公告)号：US20060194356A1
公开(公告)日：2006-08-31
申请号：US11238319
申请日：2005-09-29
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译： 本发明提供一种形成多波长半导体激光器件的方法。 该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn（1-xy）P（0≤x≤1,0<= y <= 1）组成的蚀刻停止层） 在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后，在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。
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