发明申请
US20070018232A1 Nonvolatile storage array with continuous control gate employing hot carrier injection programming
有权
具有采用热载流子注入编程的连续控制栅极的非易失存储阵列
- 专利标题: Nonvolatile storage array with continuous control gate employing hot carrier injection programming
- 专利标题(中): 具有采用热载流子注入编程的连续控制栅极的非易失存储阵列
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申请号: US11188582申请日: 2005-07-25
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公开(公告)号: US20070018232A1公开(公告)日: 2007-01-25
- 发明人: Gowrishankar Chindalore , Cheong Hong , Craig Swift
- 申请人: Gowrishankar Chindalore , Cheong Hong , Craig Swift
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
An array of storage cells include a first source/drain region underlying a first trench defined in a semiconductor substrate and a second source/drain region underlying a second trench in the substrate. A charge storage stack lines each of the trenches where the charge storage stack includes a layer of discontinuous storage elements (DSEs). A control gate overlies the first trench. The control gate may run perpendicular to the trenches and traverse the first and second trenches. In another implementation, the control gate runs parallel with the trenches. The storage cell may include one or more diffusion regions occupying an upper surface of the substrate between the first and second trenches. The diffusion region may reside between first and second control gates that are parallel to the trenches. Alternatively, a pair of diffusion regions may occur on either side of a control gate that is perpendicular to the trenches.