发明申请
- 专利标题： Photomask blank, photomask and fabrication method thereof
- 专利标题（中）： 光掩模坯料，光掩模及其制造方法
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申请号： US11489477申请日： 2006-07-20
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公开(公告)号： US20070020534A1公开(公告)日： 2007-01-25
- 发明人: Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
- 申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
- 优先权： JP2005-211941 20050721; JP2005-211942 20050721
- 主分类号： B32B9/00
- IPC分类号： B32B9/00 ; B32B17/10 ; B32B17/06 ; G03F1/00
摘要：
A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
公开/授权文献
- US07771893B2 Photomask blank, photomask and fabrication method thereof 公开/授权日：2010-08-10
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