- 专利标题: Methods to minimize contact resistance
-
申请号: US11187552申请日: 2005-07-22
-
公开(公告)号: US20070020798A1公开(公告)日: 2007-01-25
- 发明人: Yiliang Wu , Beng Ong , Yuning Li
- 申请人: Yiliang Wu , Beng Ong , Yuning Li
- 专利权人: XEROX CORPORATION
- 当前专利权人: XEROX CORPORATION
- 主分类号: H01L51/40
- IPC分类号: H01L51/40
摘要:
A method is disclosed for making a metal electrode which minimizes the contact resistance between it and an organic semiconductor. Acid-stabilized metal nanoparticles are deposited upon a substrate and annealed. This creates a metal electrode and releases acid. Upon deposition of semiconductor and subsequent annealing, the acid diffuses from the electrode into the semiconductor layer and acts as a dopant, minimizing the contact resistance. The use of oleic acid-stabilized silver nanoparticles is demonstrated.
公开/授权文献
- US07306969B2 Methods to minimize contact resistance 公开/授权日:2007-12-11
信息查询
IPC分类: