发明申请
- 专利标题： Method of manufacturing composite wafer structure
- 专利标题（中）： 复合晶片结构的制造方法
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申请号： US11245163申请日： 2005-10-07
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公开(公告)号： US20070020873A1公开(公告)日： 2007-01-25
- 发明人: Jer-Liang Yeh , Jing-Yi Huang , Wen-Ching Hsu , Ya-Lan Ho , Sung-Lin Hsu , Jung-Tsung Wang
- 申请人： Jer-Liang Yeh , Jing-Yi Huang , Wen-Ching Hsu , Ya-Lan Ho , Sung-Lin Hsu , Jung-Tsung Wang
- 专利权人： SINO-AMERICAN SILICON PRODUCTS INC.
- 当前专利权人： SINO-AMERICAN SILICON PRODUCTS INC.
- 优先权： TW094124815 20050722
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/76 ; H01L21/30
摘要：
The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.
公开/授权文献
- US07816233B2 Method of manufacturing composite wafer structure 公开/授权日：2010-10-19
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