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11 条记录 (耗时 0.033 秒)

    Method of manufacturing composite wafer structure
    1.
    发明授权
    Method of manufacturing composite wafer structure 有权
    复合晶片结构的制造方法

    公开(公告)号：US07816233B2

    公开(公告)日：2010-10-19

    申请号：US11245163

    申请日：2005-10-07

    申请人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

    发明人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

    IPC分类号： H01L21/46

    CPC分类号： H01L21/76256

    摘要： The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

    摘要翻译： 本发明提供一种制造复合晶片结构的方法。 特别地，根据本发明的方法是基于断裂力学理论来主动控制在复合晶片结构的制造过程中引起的断裂并进一步防止不希望的边缘损伤。 因此，根据本发明的方法可以提高关于复合晶片结构的工业量产的产率。

    Method of manufacturing composite wafer structure
    2.
    发明申请
    Method of manufacturing composite wafer structure 有权
    复合晶片结构的制造方法

    公开(公告)号：US20070020873A1

    公开(公告)日：2007-01-25

    申请号：US11245163

    申请日：2005-10-07

    申请人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

    发明人： Jer-Liang Yeh ,  Jing-Yi Huang ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Sung-Lin Hsu ,  Jung-Tsung Wang

    IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/30

    CPC分类号： H01L21/76256

    摘要： The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

    摘要翻译： 本发明提供一种制造复合晶片结构的方法。 特别地，根据本发明的方法是基于断裂力学理论来主动控制在复合晶片结构的制造过程中引起的断裂并进一步防止不希望的边缘损伤。 因此，根据本发明的方法可以提高关于复合晶片结构的工业量产的产率。

    METHOD OF MANUFACTURING CRYSTALLINE SILICON INGOT
    6.
    发明申请
    METHOD OF MANUFACTURING CRYSTALLINE SILICON INGOT 有权
    制造晶体硅的方法

    公开(公告)号：US20110303143A1

    公开(公告)日：2011-12-15

    申请号：US13098051

    申请日：2011-04-29

    申请人： Chung-Wen Lan ,  Ya-Lu Tsai ,  Sung-Lin Hsu ,  Chao-Kun Hsieh ,  Wen-Chieh Lan ,  Wen-Ching Hsu

    发明人： Chung-Wen Lan ,  Ya-Lu Tsai ,  Sung-Lin Hsu ,  Chao-Kun Hsieh ,  Wen-Chieh Lan ,  Wen-Ching Hsu

    IPC分类号： C30B11/02 ,  C01B33/021

    CPC分类号： C30B11/14 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B11/02 ,  C30B28/06 ,  C30B29/06

    摘要： An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.

    摘要翻译： 提供了一种制造晶体硅锭的方法。 该方法包括提供通过使用定向凝固方法熔化和冷却硅原料而形成的模具，在模具内设置阻挡层，在阻挡层上设置一个或多个硅晶体种子，将硅原料装载到硅晶种上 ，加热模具以获得硅熔体，并通过定向凝固工艺冷却模具，将硅熔体固化成硅锭。 将模具加热直到硅原料完全熔化，硅晶体晶种至少部分熔化。

    Crystalline silicon ingot and method of fabricating the same
    7.
    发明授权
    Crystalline silicon ingot and method of fabricating the same 有权
    结晶硅锭及其制造方法

    公开(公告)号：US09133565B2

    公开(公告)日：2015-09-15

    申请号：US13430131

    申请日：2012-03-26

    申请人： Wen-Chieh Lan ,  Yong-Cheng Yu ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

    发明人： Wen-Chieh Lan ,  Yong-Cheng Yu ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

    IPC分类号： C30B11/02 ,  C30B11/14 ,  C30B29/06 ,  C30B11/00

    CPC分类号： C30B11/02 ,  C30B11/00 ,  C30B11/14 ,  C30B29/06

    摘要： A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.

    摘要翻译： 提供一种晶体硅锭及其制造方法。 使用结晶硅籽晶层，通过定向凝固工艺形成晶体硅锭。 晶体硅种子层由多个初级单晶硅晶种和多个次级单晶硅晶种形成。 每个初级单晶硅种子具有不同于（100）的第一晶体取向。 每个次级单晶硅种子具有不同于第一晶体取向的第二晶体取向。 每个初级单晶硅种子与次级单晶硅种子中的至少一种相邻，并与主要单晶硅晶种的其它晶体分离。

    Structure of liquid cooled waterblock with thermal conductivities
    9.
    发明申请
    Structure of liquid cooled waterblock with thermal conductivities 审中-公开
    具有导热性的液体冷却水箱结构

    公开(公告)号：US20060162899A1

    公开(公告)日：2006-07-27

    申请号：US11042047

    申请日：2005-01-26

    申请人： Wei Huang ,  Sung-Lin Hsu

    发明人： Wei Huang ,  Sung-Lin Hsu

    IPC分类号： H05K7/20

    CPC分类号： H01L23/467 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention is a structure of liquid cooled waterblock with thermal conductivities. More specifically, it is used in a waterblock, which is employed by the liquid cooled thermal dissipation system of chip on the computer's main unit. The waterblock includes an upper cover and a body, in which multiple thermal conductivities are provided at the upper and lower sides of the upper cover to conduct thermal radiation. The lower conductivities are setted at the containing slot inside the body such that not only turbulent flow of liquid in the waterblock is formed, but the thermal generated by the chip is conducted to the upper cover and dissipated by the fan as well. Simultaneously, part of the thermal is conducted from the thermal conductivities to liquid, and then brought to the radiator through the circulating flow of liquid to perform thermal radiation.

    摘要翻译： 本发明是具有导热性的液体冷却水阻挡层的结构。 更具体地说，它被用在计算机主机上由芯片的液体冷却散热系统采用的水阻挡件中。 水封包括上盖和主体，其中多个热导率设置在上盖的上侧和下侧以进行热辐射。 较低的电导率设置在主体内的容纳槽处，使得不仅形成水块中的液体的湍流，而且由芯片产生的热量也被传导到上盖并且被风扇消散。 同时，热量的一部分从热导率传导到液体，然后通过液体的循环流进入散热器进行热辐射。

    Structure for heat dissipation in a portable computer
    10.
    发明申请
    Structure for heat dissipation in a portable computer 审中-公开
    便携式电脑散热结构

    公开(公告)号：US20070097626A1

    公开(公告)日：2007-05-03

    申请号：US11583079

    申请日：2006-10-19

    申请人： Wei-Cheng Huang ,  Sung-Lin Hsu

    发明人： Wei-Cheng Huang ,  Sung-Lin Hsu

    IPC分类号： G06F1/20

    CPC分类号： G06F1/203 ,  H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The structure for heat dissipation in a portable computer according the present invention is a structural design that provides an additional heat dissipation room in the main containing space inside the notebook computer, and provides heat dissipation module in the heat dissipation room, such that the efficiency of heat dissipation is raised. The heat dissipation module includes a heat conductor, a fan, and a heat dissipation plate. Besides, air inlet and air outlet are provided in the heat dissipation room to enable air convection during heat exchange, and accordingly ameliorate the drawback of insufficient heat dissipation in a conventional structure.

    摘要翻译： 根据本发明的便携式计算机中的散热结构是在笔记本计算机内部的主容纳空间内提供附加的散热室的结构设计，并且在散热室中提供散热模块， 散热增加。 散热模块包括热导体，风扇和散热板。 此外，在散热室设有进风口和空气出口，以便在热交换期间进行空气对流，从而改善了常规结构中散热不足的缺点。