发明申请
- 专利标题： Semiconductor device fabricated by a method of reducing the contact resistance of the connection regions
- 专利标题（中）： 通过降低连接区域的接触电阻的方法制造的半导体器件
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申请号： US11526116申请日： 2006-09-22
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公开(公告)号： US20070020930A1公开(公告)日： 2007-01-25
- 发明人: Robert Lander , Marcus van Dal , Jacob Hooker
- 申请人： Robert Lander , Marcus van Dal , Jacob Hooker
- 优先权： BE20030546 20031017
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor device, fabricated by a method, having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate is disclosed. In one embodiment, the method includes i) forming, at least at the silicon region, a metal cluster layer from a first metal, such that, in the metal cluster layer, metal clusters alternate with sites where there are no metal clusters, the first metal being a non-siliciding metal at predetermined conditions, ii) depositing a metal layer of a second metal on top of the metal cluster layer, the second metal being a siliciding metal and iii) carrying out at least one heat treatment at the predetermined conditions on the second metal layer so as to form metal silicide through reaction of the second metal with the silicon region, wherein atoms of the first metal are displaced in a direction substantially perpendicular to the surface of the substrate.