发明申请
- 专利标题: Plasma processing method and apparatus
- 专利标题(中): 等离子体处理方法和装置
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申请号: US11517456申请日: 2006-09-08
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公开(公告)号: US20070020958A1公开(公告)日: 2007-01-25
- 发明人: Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
- 申请人: Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
- 优先权: JP2003-315414 20030908
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.
公开/授权文献
- US07858537B2 Plasma processing method and apparatus 公开/授权日:2010-12-28
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