发明申请
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US11355165申请日: 2006-02-16
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公开(公告)号: US20070023398A1公开(公告)日: 2007-02-01
- 发明人: Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
- 申请人: Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 优先权: JP2005-217552 20050727
- 主分类号: B23H7/00
- IPC分类号: B23H7/00 ; B23H1/00
摘要:
A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.
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