Heat treatment apparatus
    1.
    发明授权
    Heat treatment apparatus 失效
    热处理设备

    公开(公告)号:US08569647B2

    公开(公告)日:2013-10-29

    申请号:US13185622

    申请日:2011-07-19

    IPC分类号: B23K10/00 H05B1/02 F27D11/12

    摘要: Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.

    摘要翻译: 提供一种热处理装置,其中热效率高,维护费用低,生产量高,样品表面粗糙度可以降低,并且放电均匀性优异的热处理装置,尽管 在1200℃以上进行热处理。 热处理装置包括:平行平面电极; 射频电源,通过在平行平面电极之间施加射频电力而产生等离子体; 测量加热样品的温度的温度测量部分; 以及控制单元,其控制所述射频电源的输出,其中,所述平行平面电极中的至少一个具有其中安装了所述被加热样品的空间,并且通过在所述平行电极之间产生的等离子体来加热所述电极中的所述样品 平面电极。

    HEAT TREATMENT APPARATUS
    2.
    发明申请
    HEAT TREATMENT APPARATUS 审中-公开
    热处理设备

    公开(公告)号:US20130112669A1

    公开(公告)日:2013-05-09

    申请号:US13354358

    申请日:2012-01-20

    IPC分类号: B23K9/00

    CPC分类号: H01J37/32082

    摘要: The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.

    摘要翻译: 本发明提供一种热处理装置,即使在将待加热的样品加热至1200℃以上的情况下,也能够在保持热效率高的同时降低加工基板的表面粗糙化。 本发明是一种对待加热样品进行热处理的热处理装置,其中通过辉光放电产生的等离子体被用作加热源,被加热物被间接加热。

    HEAT TREATMENT APPARATUS
    3.
    发明申请
    HEAT TREATMENT APPARATUS 失效
    热处理设备

    公开(公告)号:US20120285935A1

    公开(公告)日:2012-11-15

    申请号:US13185622

    申请日:2011-07-19

    IPC分类号: B23K9/00

    摘要: Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.

    摘要翻译: 提供一种热处理装置,其中热效率高,维护费用低,生产量高,样品表面粗糙度降低,并且放电均匀性优异的热处理装置,尽管 在1200℃以上进行热处理。 热处理装置包括:平行平面电极; 射频电源,通过在平行平面电极之间施加射频电力而产生等离子体; 测量加热样品的温度的温度测量部分; 以及控制单元,其控制所述射频电源的输出,其中,所述平行平面电极中的至少一个具有其中安装了所述被加热样品的空间,并且通过在所述平行电极之间产生的等离子体来加热所述电极中的所述样品 平面电极。

    HEAT TREATMENT APPARATUS
    5.
    发明申请
    HEAT TREATMENT APPARATUS 有权
    热处理设备

    公开(公告)号:US20110284506A1

    公开(公告)日:2011-11-24

    申请号:US13105981

    申请日:2011-05-12

    IPC分类号: B23K10/00

    摘要: The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.

    摘要翻译: 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备,该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中,将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体(氦,氩,氪,氙等)的间隙。 从高频电源馈送的电力施加到上电极,以引起大气压辉光放电。 电极之间的间隙中的气体加热(其取决于辉光放电)用于热处理待加热的样品。

    Room temperature curable organopolysiloxane composition and making method
    6.
    发明授权
    Room temperature curable organopolysiloxane composition and making method 失效
    室温可固化有机聚硅氧烷组合物及制备方法

    公开(公告)号:US06342575B1

    公开(公告)日:2002-01-29

    申请号:US09641752

    申请日:2000-08-21

    IPC分类号: C08G7716

    摘要: A room temperature curable organopolysiloxane composition comprising (1) a hydroxyl end-blocked organopolysiloxane having a viscosity of 10-1,000,000 centistokes at 25° C. in admixture with a premix of (2) methyltriacetoxysilane or a partial hydrolyzate thereof as a curing agent and (3) methanol is improved in shelf stability, physical properties and outer appearance as well as adhesion to aluminum.

    摘要翻译: 一种室温可固化的有机基聚硅氧烷组合物,其包含(1)在25℃粘度为10-1,000,000厘沲的羟基封端的有机聚硅氧烷与(2)甲基三乙酰氧基硅烷或其部分水解产物作为固化剂和( 3)甲醇的贮存稳定性,物理性能和外观以及对铝的粘附性均有所提高。

    Plasma processing apparatus
    9.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号:US20070023398A1

    公开(公告)日:2007-02-01

    申请号:US11355165

    申请日:2006-02-16

    IPC分类号: B23H7/00 B23H1/00

    摘要: A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.

    摘要翻译: 提供一种等离子体处理装置,其可以在放电期间或之后去除待处理物体上的异物。 等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元,用于向处理室供给射频电力并形成等离子体的天线电极,用于抽出处理室内部的真空排气单元; 设置电极,用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。