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发明申请
US20070023925A1 Semiconductor element with conductive bumps and fabrication method thereof 审中-公开
具有导电凸块的半导体元件及其制造方法

Semiconductor element with conductive bumps and fabrication method thereof
摘要：
A semiconductor device and a fabrication method thereof are provided. A first passivation layer and a second passivation layer are applied on a semiconductor substrate having at least one bond pad, with the bond pad being exposed. A first metallic layer is formed on the second passivation layer and electrically connected to the bond pad. A third passivation layer is applied on the first metallic layer and exposes a portion of the first metallic layer. A second metallic layer is formed on the third passivation layer and electrically connected to the exposed portion of the first metallic layer. A fourth passivation layer is applied on the second metallic layer and has an opening corresponding in position to the bond pad, allowing a portion of the second metallic layer to be exposed via the opening, such that a solder bump is formed on the exposed portion of the second metallic layer.
摘要（中）：

提供半导体器件及其制造方法。 将第一钝化层和第二钝化层施加到具有至少一个接合焊盘的半导体衬底上，其中焊盘被暴露。 第一金属层形成在第二钝化层上并电连接到接合焊盘。 将第三钝化层施加在第一金属层上并暴露第一金属层的一部分。 第二金属层形成在第三钝化层上并电连接到第一金属层的暴露部分。 在第二金属层上施加第四钝化层，并且具有与接合焊盘相对应的开口的开口，允许第二金属层的一部分经由开口露出，使得在露出部分上形成焊料凸块 第二金属层。

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